Because of these features they can switch at high switching frequencies (high slew rates) improving power density, transient performance and system running cooler. GaN transistors have switching performance advantages than Silicon Fets due to lower terminal capacitances for the same Ron and lack of body diode reverse recovery loss.Gallium Nitride (GaN) is one of the best silicon alternatives in today’s world.There are basically 2 products, the high voltage 600V LMG3410 and the medium voltage 80V LMG5200. These GaN FETs come with the driving circuitry included in them, hence are also quite often referred as modules.
TI has introduced the latest GaN( Gallium Nitride) power FETs.
